Device output concentrated in Marcy. The only high-volume SiC device line on US soil.
Wolfspeed concentrated 200mm silicon-carbide device output at Mohawk Valley in Marcy. Durham’s old 150mm line is shut. This is the only high-volume SiC device line on US soil - MOSFETs and diodes for robot motor drives, EV inverters, and fast chargers.
The fab is the world’s first purpose-built 200mm SiC device plant. Utilization is climbing after a hard ramp. Marcy Nanocenter, 5757 Marcy-SUNY Parkway.
A humanoid joint still needs a magnet and a driver. The driver wants SiC. Marcy is where that die is supposed to come from.